Boron-doped Graphene (BG) is a novel nanomaterial based on graphene, a single sheet of carbon atoms in a hexagonal lattice. The addition of boron atom impurities into pure graphene increases the activation region on its surface, enhances its catalytic ability, accelerates redox reactions, and opens the band gap, giving it numerous applications in fuel cell chemistry, semiconductor devices, ultracapacitors, sensors, and other technologies. Nanographenex also manufactures nitrogen-doped graphene and boron/nitrogen co-doped graphene. Please request a quote above to receive pricing information based on your specifications.
Boron Doped Graphene
DESCRIPTION
- Typical thickness: <10 layers.
- Typical size : 5-10 μm.
- Application
- Electro catalyst.
- Field-effect transistors.
- Sensors.
- Lithium ion batteries.
- Supercapacitors.
Compound Formula B/C Size Range < 10 layers Average Particle Size 5-10 µm Morphology Platelets Thickness 5 nm
- Typical thickness: <10 layers.
- Typical size : 5-10 μm.
- Application
- Electro catalyst.
- Field-effect transistors.
- Sensors.
- Lithium ion batteries.
- Supercapacitors.
| Compound Formula | B/C |
|---|---|
| Size Range | < 10 layers |
| Average Particle Size | 5-10 µm |
| Morphology | Platelets |
| Thickness | 5 nm |
Applications
- 2D Materials
- Energy Storage & Batteries
- Fuel Cells
- Nanomaterials Research
- Semiconductors
- 2D Materials
- Energy Storage & Batteries
- Fuel Cells
- Nanomaterials Research
- Semiconductors
XRD Analysis
XPS Analysis
Peaks
Peak Position (eV)
Atomic Contentration (%)
B1s
195,98
11,1
C1s
293,48
77,52
O1s
540,88
11,38
Peaks | Peak Position (eV) | Atomic Contentration (%) |
B1s | 195,98 | 11,1 |
C1s | 293,48 | 77,52 |
O1s | 540,88 | 11,38 |
TEM
SEM
