Lead Sulfide Quantum Dots (PbS QDs) – 1550 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1550 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanomaterials with exceptional optical and electronic properties. With an emission peak at 1550 nm, PbS QDs are particularly significant for applications in telecommunications, photodetectors, photovoltaics, and infrared imaging. Their size-tunable band-edge absorption allows precise control of their optical properties, covering a broad spectral range from visible to deep infrared.

PbS QDs exhibit remarkable photophysical characteristics, including strong NIR absorption, long exciton lifetimes, and efficient carrier transport. These properties make them highly attractive for optoelectronic devices, next-generation solar technologies, and advanced sensing applications. Unlike conventional bulk semiconductors, PbS QDs provide the advantage of quantum confinement, enabling customizable bandgaps for specific device requirements.

At Nanographenex, we supply high-quality PbS QDs with controlled particle size, uniform morphology, and excellent stability, meeting both research-grade and industrial-scale needs.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1550 nm (near-infrared region, telecom wavelength)

• Unique Features: Size-tunable bandgap, broad spectral response, excellent photostability

• Advantages: High quantum efficiency, long exciton lifetimes, and superior carrier mobility

• Versatility: Suitable for optoelectronics, photonics, sensing, and energy applications

• Customization: Available in multiple sizes, concentrations, and solvents to fit application needs

Nanographenex ensures reliable production of PbS Quantum Dots with stringent quality control, making them suitable for cutting-edge technologies in telecommunications, energy harvesting, and biomedical imaging.

Applications

• Photodetectors & Infrared Sensors:
  PbS QDs at 1550 nm are ideal for telecom photodetectors and NIR sensors, as this wavelength is widely used in fiber-optic communications. They also support applications in night vision, LIDAR, and environmental monitoring.

• Light Emitting Diodes (LEDs):
  PbS QDs can be engineered into NIR LEDs, offering applications in optoelectronic circuits, medical devices, and secure optical communication systems.

• Transistors & Electronics:
  Their strong carrier transport properties enable integration into quantum dot-based transistors and electronic circuits, enhancing performance in optoelectronic systems.

• Photovoltaics & Solar Cells:
  PbS QDs are widely researched for use in quantum dot solar cells, where their tunable bandgap allows extended absorption into the infrared spectrum, improving energy conversion efficiency in tandem solar cell structures.

• Electrocatalysis & Energy Storage:
  PbS QDs demonstrate catalytic activity in hydrogen evolution reactions (HER) and other electrochemical processes. Their electron transport properties also make them promising for energy storage and conversion devices.

• Biomedical Imaging:
  The emission at 1550 nm (NIR-II window) provides deeper tissue penetration with lower scattering, making PbS QDs attractive for non-invasive biomedical imaging and diagnostics.