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Description

Hafnium Oxide (HfO₂) Nanopowder (99.99%, 55–75 nm, White)

Hafnium Oxide (HfO₂), also known as hafnia, is a high-purity nanopowder with a particle size range of 55–75 nm and exceptional chemical stability. With its wide band gap (~6 eV), high dielectric constant, and excellent thermal stability, HfO₂ is widely used in advanced electronic, optical, and refractory applications. This material offers high transparency in the 0.2–9.0 μm band and outstanding insulating properties, making it a strong candidate for use in microelectronics and next-generation semiconductor devices.

Hafnium(IV) oxide is one of the most stable compounds of hafnium and functions as an intermediate in certain processes for hafnium metal production. It is inert under most conditions, but it reacts with concentrated sulfuric acid and strong bases. In hydrofluoric acid, it dissolves slowly to form fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of carbon sources to form hafnium tetrachloride.


Technical Properties

  • Purity (%): 99.99

  • Color: White

  • Average Particle Size (nm): 55–75

  • Morphology: Nearly spherical

  • Refractive Index: 2

  • True Density (g/cm³): 9.8

  • Transparent Band (µm): 0.2–9.0

Elemental Analysis (%)

  • Fe: 0.0012

  • Ni: 0.0009

  • Mn: 0.0001

  • Ti: 0.0010

  • Cu: 0.0005


Applications

Hafnium Oxide nanoparticles are used extensively in electronics, optics, and high-temperature materials. Their combination of high dielectric constant and thermal stability makes them indispensable in emerging semiconductor technologies.

Key applications include:

  • Microelectronics: High-k dielectric material in DRAM capacitors and future integrated circuits.

  • Optical Coatings: Enhances durability and performance in precision optical devices.

  • Refractory Material: Suitable for use under extreme thermal conditions.

  • Advanced Devices: Studied as an alternative to silicon dioxide in next-generation semiconductor applications.

  • Other Uses: Transparent coatings, photonics, and as an insulating layer in nanoscale transistors.

Additional information

Gram

25 g, 100 g