Lead Sulfide Quantum Dots (PbS QDs) – 1050 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1050 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanomaterials that stand out for their size-tunable band-edge absorption and broad spectral response. With an emission peak at 1050 nm, PbS QDs are highly suitable for infrared photodetection, solar energy conversion, optoelectronic devices, and biomedical imaging.

Thanks to their quantum confinement effects, PbS QDs exhibit a tunable bandgap, enabling precise control over emission and absorption wavelengths. They also demonstrate long exciton lifetimes, strong photoluminescence in the NIR region, high carrier mobility, and excellent photostability. These unique properties make PbS QDs one of the most promising materials for next-generation optoelectronics, sustainable energy technologies, and advanced biomedical applications.

At Nanographenex, we provide high-purity PbS Quantum Dots (1050 nm) with uniform particle size, consistent emission quality, and strong stability. Our PbS QDs are produced under strict quality control protocols, ensuring reliable performance for both research laboratories and industrial manufacturing.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1050 nm (NIR region)

• Key Features: Size-tunable bandgap, broad absorption spectrum, quantum confinement effects

• Advantages: Strong NIR photoluminescence, high carrier mobility, long exciton lifetimes, and photostability

• Applications: Photodetectors, LEDs, solar cells, transistors, electrocatalysis, and biomedical imaging

• Customization: Available in multiple particle sizes, solvents, and concentrations upon request

Nanographenex PbS QDs are designed for cutting-edge optoelectronic integration, offering versatility and reproducibility for applications across telecommunications, renewable energy, and medical imaging.

Applications

• Photodetectors & NIR Sensors:
  PbS QDs at 1050 nm are widely applied in infrared photodetectors, fiber-optic networks, night vision, and LIDAR systems, supporting high-speed data transfer and advanced sensing.

• Light Emitting Diodes (LEDs):
  PbS QDs can be integrated into NIR LEDs, which are essential for medical devices, secure optical communication, and photonic circuits.

• Transistors & Electronics:
  With strong carrier transport and high stability, PbS QDs are suitable for thin-film transistors (TFTs) and other electronic components, improving device efficiency.

• Photovoltaics & Solar Cells:
  PbS QDs are a leading candidate for quantum dot solar cells, enabling absorption of the infrared spectrum beyond the visible range. Their tunable bandgap makes them suitable for multi-junction and tandem solar cell architectures, enhancing efficiency.

• Electrocatalysis & Energy Applications:
  PbS QDs play a role in hydrogen evolution reactions (HER), oxygen reduction, and other electrocatalytic processes, supporting the development of renewable energy and storage technologies.

• Biomedical Imaging:
  Emission at 1050 nm lies within the NIR-II biological window, providing deep tissue penetration, reduced scattering, and high-resolution bioimaging, making them valuable in non-invasive diagnostics and medical research.