Lead Sulfide Quantum Dots (PbS QDs) – 1150 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1150 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanocrystals with exceptional size-tunable band-edge absorption and a broad spectral response. With an emission peak at 1150 nm, these QDs operate in the NIR-II biological and telecommunication window, making them ideal for infrared imaging, photodetectors, photovoltaics, and optoelectronics.

PbS QDs are highly valued for their quantum confinement effects, tunable bandgap, and strong NIR photoluminescence. They exhibit long exciton lifetimes, excellent photostability, and high carrier mobility, enabling their integration into advanced solar cells, high-speed telecom systems, energy harvesting, and biomedical platforms. Their ability to extend absorption beyond the visible spectrum provides significant advantages over traditional semiconductors.

At Nanographenex, we provide high-quality PbS Quantum Dots (1150 nm) with uniform particle size, stable optical performance, and excellent dispersibility. Our QDs are manufactured under strict quality standards, making them suitable for both research and industrial-scale applications.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1150 nm (NIR-II window)

• Key Features: Size-tunable bandgap, broad absorption spectrum, strong NIR luminescence

• Advantages: High stability, excellent carrier transport, long exciton lifetimes

• Applications: Optoelectronics, infrared imaging, solar cells, energy devices, and biomedical diagnostics

• Customization: Different particle sizes, solvents, and concentrations available upon request

Nanographenex PbS QDs are optimized to deliver consistent optical properties and high reproducibility, supporting a wide range of advanced technologies from fiber-optic communications to bioimaging.

Applications

• Photodetectors & NIR Sensors:
  PbS QDs with 1150 nm emission are extensively used in infrared photodetectors for telecommunication systems, night vision, LIDAR, and remote sensing. Their size-tunable absorption makes them highly adaptable for advanced optical sensors.

• Light Emitting Diodes (LEDs):
  PbS QDs can be used to fabricate NIR LEDs, applied in medical instrumentation, optical communications, and photonic devices requiring near-infrared emission.

• Transistors & Electronics:
  Their excellent electronic transport properties allow PbS QDs to be integrated into quantum dot thin-film transistors (QD-TFTs), boosting conductivity and overall device performance.

• Photovoltaics & Solar Cells:
  PbS QDs are promising for quantum dot solar cells, where their NIR absorption improves light-harvesting efficiency. They are particularly useful in tandem and multi-junction solar architectures.

• Electrocatalysis & Energy Systems:
  PbS QDs demonstrate catalytic potential in hydrogen evolution reactions (HER) and other electrocatalytic processes, contributing to the development of sustainable energy conversion and storage systems.

• Biomedical Imaging:
  Operating in the NIR-II biological window, PbS QDs provide deep tissue penetration, low background interference, and high-resolution imaging, making them suitable for non-invasive diagnostics and bioimaging applications.