Lead Sulfide Quantum Dots (PbS QDs) – 1250 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1250 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanocrystals that offer size-tunable band-edge absorption and a broad spectral response. With an emission peak at 1250 nm, they are especially important for telecommunications, optoelectronic devices, infrared photodetection, and solar energy technologies.

PbS QDs exhibit remarkable photophysical and photoelectrical properties, including long exciton lifetimes, strong quantum confinement effects, and excellent carrier mobility. Their broad absorption spectrum makes them highly versatile, enabling applications from advanced photovoltaics to next-generation biomedical imaging. By carefully tuning particle size, their optical properties can be customized for specific requirements, which positions them as a reliable material for both scientific research and industrial applications.

At Nanographenex, we provide high-purity PbS Quantum Dots (1250 nm) with uniform particle distribution, strong stability, and excellent optical quality. These nanomaterials are optimized for optoelectronic integration, energy harvesting, and sensing applications.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1250 nm (NIR region)

• Key Features: Size-tunable bandgap, broad optical absorption, strong NIR emission

• Advantages: High quantum efficiency, long carrier lifetimes, excellent photostability

• Applications: Infrared detectors, LEDs, transistors, photovoltaics, solar cells, catalysis, and biomedical platforms

• Customization: Available in multiple solvents, concentrations, and particle sizes upon request

Nanographenex PbS QDs are manufactured with strict quality assurance, ensuring reproducibility and performance consistency for research laboratories and industrial-scale production.

Applications

• Photodetectors & Infrared Sensors:
  PbS QDs at 1250 nm are widely used in NIR photodetectors and fiber-optic communication systems, supporting secure, high-speed data transfer. They are also valuable in LIDAR, remote sensing, and environmental monitoring systems.

• Light Emitting Diodes (LEDs):
  PbS QDs can be engineered into infrared LEDs, which are essential in optoelectronic circuits, imaging devices, and optical communication tools.

• Transistors & Electronics:
  Their efficient carrier transport makes PbS QDs suitable for thin-film transistors (TFTs) and advanced semiconductor electronics, contributing to better conductivity and device stability.

• Photovoltaics & Solar Cells:
  PbS QDs are key candidates for quantum dot solar cells, expanding absorption into the near-infrared spectrum. Their tunable bandgap improves energy harvesting efficiency, particularly in tandem and multi-junction solar cell architectures.

• Electrocatalysis & Energy Systems:
  PbS QDs support electrocatalytic reactions such as hydrogen evolution and oxygen reduction, making them suitable for renewable energy and storage technologies.

• Biomedical Imaging & Diagnostics:
  Operating within the NIR-II biological window, PbS QDs enable deep-tissue imaging, low scattering, and high-resolution diagnostics, opening opportunities for non-invasive bioimaging platforms.