Lead Sulfide Quantum Dots (PbS QDs) – 1350 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1350 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanocrystals with outstanding size-tunable optical and electronic properties. With an emission peak at 1350 nm, PbS QDs operate in the NIR-II spectral window, which is highly valuable for telecommunications, infrared sensing, photovoltaics, and biomedical imaging.

PbS QDs exhibit size-dependent band-edge absorption and a broad tunable spectrum, enabling precise control over their optical properties. Their strong NIR absorption, long exciton lifetimes, high carrier mobility, and excellent photostability make them ideal for next-generation optoelectronic devices and energy systems. By leveraging their quantum confinement effects, PbS QDs can be engineered for specific emission ranges, supporting applications from advanced solar cells to deep-tissue imaging platforms.

At Nanographenex, we supply high-purity PbS Quantum Dots with controlled size distribution, reliable emission characteristics, and excellent colloidal stability. Our QDs are optimized for both academic research and industrial production, ensuring reproducibility and performance across a wide spectrum of technologies.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1350 nm (NIR-II region)

• Key Features: Size-tunable bandgap, strong quantum confinement, and broad spectral absorption

• Advantages: High photoluminescence efficiency, long exciton lifetime, superior electronic transport

• Applications: Photodetectors, LEDs, solar cells, transistors, electrocatalysis, and biomedical imaging

• Customization: Available in multiple particle sizes, solvents, and concentrations upon request

Nanographenex ensures stringent quality control and tailored solutions to provide PbS Quantum Dots suitable for cutting-edge optoelectronics, renewable energy systems, and advanced biomedical research.

Applications

• Photodetectors & Infrared Sensors:
  PbS QDs at 1350 nm are highly effective for infrared photodetectors and telecom devices, particularly in fiber-optic communication. They are also applied in environmental monitoring, LIDAR, and NIR imaging systems.

• Light Emitting Diodes (LEDs):
  PbS QDs can be integrated into near-infrared LEDs, enabling use in secure optical communication, medical imaging devices, and photonic circuits.

• Transistors & Advanced Electronics:
  With strong carrier mobility, PbS QDs are utilized in quantum dot thin-film transistors (QD-TFTs) and other next-generation electronic components, improving stability and conductivity.

• Photovoltaics & Solar Cells:
  PbS QDs are extensively researched for quantum dot solar cells, where their tunable absorption into the NIR-II region improves solar spectrum utilization. They are particularly suited for tandem and multi-junction solar architectures, boosting overall efficiency.

• Electrocatalysis & Energy Applications:
  PbS QDs exhibit catalytic potential for hydrogen evolution reactions (HER), oxygen reduction, and other electrochemical processes, making them promising candidates for sustainable energy technologies.

• Biomedical Imaging & Diagnostics:
  Operating at 1350 nm within the NIR-II window, PbS QDs enable deep-tissue penetration, low scattering, and high-resolution imaging. This makes them suitable for non-invasive biomedical imaging, diagnostic platforms, and biosensors.