Lead Sulfide Quantum Dots (PbS QDs) – 1450 nm

Description

Lead Sulfide Quantum Dots (PbS QDs) – 1450 nm

Lead Sulfide Quantum Dots (PbS QDs) are near-infrared (NIR) semiconductor nanomaterials with exceptional optical and electronic properties. With an emission peak at 1450 nm, PbS QDs operate within the NIR-II spectral window, which is highly valuable for telecommunications, infrared imaging, photodetection, and photovoltaics.

PbS QDs stand out due to their size-tunable band-edge absorption and ability to cover a wide spectral range from visible to deep infrared. By controlling particle size, their bandgap can be precisely engineered, making them adaptable for a wide range of devices. They exhibit long exciton lifetimes, strong absorption in the NIR region, and efficient carrier mobility, enabling high-performance optoelectronic applications.

At Nanographenex, we provide high-quality PbS Quantum Dots (1450 nm) with consistent particle size, morphology, and stability. Our QDs are designed to meet the needs of both research laboratories and industrial applications, ensuring reliable performance across diverse technologies.

Product Overview

• Material: Lead Sulfide Quantum Dots (PbS QDs)

• Emission Peak: 1450 nm (near-infrared, NIR-II window)

• Key Features: Size-tunable bandgap, broad spectral absorption, strong NIR emission

• Advantages: High quantum efficiency, excellent stability, and long carrier lifetimes

• Versatility: Suitable for telecom, imaging, sensing, and energy technologies

• Customization: Available in different particle sizes, concentrations, and solvents for specific applications

Nanographenex PbS QDs are engineered with strict quality control standards, delivering reproducible and reliable results for scientific research, device development, and large-scale integration.

Applications

• Photodetectors & NIR Sensors:
  PbS QDs with 1450 nm emission are widely applied in infrared photodetectors and telecommunication systems, particularly in fiber-optic communication wavelengths. They are also used in environmental monitoring and LIDAR systems.

• Light Emitting Diodes (LEDs):
  PbS QDs can be fabricated into NIR LEDs, enabling applications in secure optical communications, medical instrumentation, and optoelectronic circuits.

• Transistors & Electronics:
  With their strong carrier transport capabilities, PbS QDs are suitable for quantum dot-based thin-film transistors (TFTs), enhancing performance in advanced electronic devices.

• Photovoltaics & Solar Cells:
  PbS QDs are actively researched for use in quantum dot solar cells, where their NIR absorption improves overall light-harvesting efficiency. Their tunability allows integration into tandem solar cells for higher energy conversion rates.

• Electrocatalysis & Energy Applications:
  PbS QDs exhibit catalytic activity for electrocatalysis, hydrogen production, and electrochemical reactions, contributing to sustainable energy technologies.

• Biomedical Imaging:
  With emission in the NIR-II window (1000–1700 nm), PbS QDs enable deep-tissue imaging with low scattering and high resolution, making them valuable in non-invasive biomedical diagnostics and bioimaging platforms.