Description
Silicon Carbide (SiC) Micron Powder, Purity: 99.5+%, Size: 350–500 μm
Product Description:
Silicon Carbide (SiC) Micron Powder with a particle size range of 350–500 μm and minimum purity of 99.5% is an advanced material designed for use in high-temperature, high-strength, and chemically resistant environments. This coarser-grade powder is particularly well-suited for heavy-duty applications where robust mechanical integrity, thermal shock resistance, and structural reliability are critical.
With a Mohs hardness of 9.5, high melting point, and outstanding thermal conductivity, this powder supports demanding applications across refractory systems, ceramics, and wear-resistant components. Its low levels of impurities and high crystalline quality make it suitable for use in industrial processes where consistent performance is essential.
Technical Properties:
SiC: 99%
Free Carbon: 0.05%
Aluminum (Al): 0.018%
Iron (Fe): 0.057%
Calcium (Ca): 0.050%
Heating Power: 30.343 KJ/mol
Hardness: 9.5 Mohs
Density (288K): 3.216 g/cm³
Compressibility Coefficient: 0.21 × 10⁻⁶
Thermal Expansion Coefficient (1173K): 2.98 × 10⁻⁶ K⁻¹
Storage Condition:
Silicon Carbide Micron Powder should be stored in a vacuum-sealed container in a cool, dry environment. It must be kept away from direct air exposure and physical stress to preserve its structure and reactivity.
Applications:
Manufacturing of high-performance refractory materials for furnaces and foundries
Ceramic components including bearing structures, kiln parts, and heat-resistant seals
Abrasive and polishing media for precision surface finishing
Production of grinding wheels and cutting tools
Structural reinforcement in composites for aerospace and automotive parts
High-temperature spray nozzles, sealing valves, and fluid transport systems
Silicon Carbide Micron Powder is chemically stable, non-toxic, and free from heavy metals and radioactive content. It is a safe and sustainable solution for industries seeking high-durability materials for thermal and mechanical extremes.