Description
Tantalum Carbide (TaC) Micron Powder, Purity: 99.9 %, Size: 1–5 µm
Product Description:
Tantalum Carbide (TaC) Micron Powder is a highly refractory ceramic material known for its exceptional hardness, thermal stability, and electrical conductivity. With a purity of 99.9% and particle size ranging from 1 to 5 µm, this fine TaC powder is ideal for advanced industrial applications that demand materials with extreme performance characteristics.
Thanks to its extremely high melting point (~3880 °C) and chemical inertness, TaC is a preferred choice in the manufacturing of cutting tools, wear-resistant coatings, aerospace engine components, and ceramic parts exposed to high heat or corrosion. It also serves as a critical additive in hardmetal formulations and cermet composites for extreme environments. The powder’s high electrical conductivity also allows its use in electronic applications such as field emitters and electrochemical electrodes.
TaC’s cubic crystal structure provides outstanding mechanical properties, while its fine particle size ensures high sintering activity and uniform dispersion in composites. Whether used alone or as a reinforcing agent, Tantalum Carbide delivers reliable structural and functional performance.
Technical Properties of Tantalum Carbide (TaC) Micron Powder
Property | Value |
---|---|
Purity | ≥99.9% |
Particle Size | 1 – 5 µm |
CAS Number | 12070-06-3 |
Crystal Structure | Cubic |
Melting Point | ~3880 °C |
Boiling Point | ~5500 °C |
Density | 13.9 g/cm³ |
Mohs Hardness @ 20°C | ~1800 kg/mm² |
Electrical Resistivity | ~30 µΩ·cm |
Form | Micronized Powder |
Applications:
Hard Metals and Cermets: Reinforcement for cutting tools and wear-resistant components.
High-Temperature Ceramics: Crucibles, nozzles, and shielding elements.
Aerospace and Defense: Structural parts subjected to thermal shock and erosion.
Electronics: Conductive coatings, emitters, and resistor materials.
Additive Manufacturing: Advanced sintering applications requiring high strength and temperature resistance.